solid state devices, inc. 14830 valley view blvd * la mirada, c a 90638 phone: (562) 404 - 7855 * fax: (562) 404 - 1773 ssdi@ssdi - power.com * www.ssdi - power.com designer?s data sheet smd.22 sf f110s .22 3.5 a / 100 volts / 0.6 w n - c hannel mosfet transistor features: rugged c onstruction with p olysilcon g ate small f ootprint h ermetic s ur face m ount d evice with e xcellent t hermal p roperties replacement/enhancement for 2n 6782 tx, txv, s - level s creening a vailable very f ast s witching c haracteristics maximum ratings symbol value units drain ? source voltage v ds 10 0 volts drain ? gate voltage v dg 10 0 volts gate ? source voltage v gs +/ - 20 volts continu ou s drain current @ t c = 25oc @ t c = 100 o c i d1 i d2 3.5 2.25 amps power diss ipation @ t c = 25oc power dissipation @ t a = 25oc n ote 1 n ote 2 p d 1 6.5 0. 8 w operating & storage temperature top & tstg - 55 to +15 0 oc maximum thermal resistance junction to case and to a mbient r q jc r q ja 7. 5 (typ 5) 156.5 oc/w note1: d erated 60.6 mw/c above t c = 25 c note2: d erated 6.4 mw/ c above t a = 25c pin 1 = collector; pin 2= emitter; pin 3= base .140 .052 .134 .030 .070 .090 .150 .007 .220 .007 .005 typ .065 .010 1 2 3 note: all specifications are subject to change without notification. scd's for these devic es should be reviewed by ssdi prior to release. data sheet #: FT0015a doc
solid state devices, inc. 14830 valley view blvd * la mirada, c a 90638 phone: (562) 404 - 7855 * fax: (562) 404 - 1773 ssdi@ssdi - power.com * www.ssdi - power.com sf f110s .22 electrical characteristic s 4 / symbol min typ max units drain ? source breakdown voltage v gs = 0 v; i d = 1 ma bv dss 100 ?? ?? v olts gate ? source threshold voltage v ds = 4 v; i d = 0.25 ma v ds =4v; i d = 0.25ma; t a = 125oc v ds =5v; i d = 0.25ma; t a = - 55oc v gs(th) 1 v gs(th)2 v gs(th)3 2.0 ?? ?? 3.0 2.0 4.0 4.0 ?? ?? v olts gate leakage current v gs = +/ - 20 v v gs = +/ - 20 v, t a = 1 2 5oc i gss1 i gss2 ?? ?? 5 10 100 ?? n a drain leakage current v gs = 0 v; v ds = 80 v v gs = 0v ; v ds = 80 v, t a = 125oc i dss1 i dss2 ?? ?? 0.02 5 2 5 ?? m a v gs = 10 v, i d = 2 .25 a v gs = 10 v, i d = 3.50 a r ds(on)1 r ds(on)2 ?? ?? 0.55 0.58 0.6 0 0.61 static d rain ? source o n - s tate resistance v gs = 10v, i d = 2 .25 a, t a = 12 5oc r ds(on)3 ?? 1.05 ?? o hm forward v oltage of the source ? drain diode i d = 3.5 a v sd ?? 1 .2 1 .5 v olts switching time test: turn - on d elay t ime rise t ime turn - off delay t ime fall t i me i d = 3. 5 a, v gs = 10 v, r g = 7.5 ohm, v dd = 50 v t d(on) t r t d(off) t f ?? ?? ?? ?? ?? ?? ?? ? ? 1 5 25 25 20 ns gate charge test: on - s tate gate charge gate ? source charge gate ? drain charge v gs = 10 v, v ds = 50 v q g(on) q gs q gd ?? ?? ?? ?? ?? ?? 6.5 5 1.61 3.46 nc reverse recovery time v dd = 5 0v, i d = 3. 5 a, di/dt = 100 a/ m s t rr ?? ?? 180 ns capacitance test: input capacitance output capacitance reverse transfer cap. v gs = 0 v, v ds = 25 v , f = 1mhz c iss c oss c rss ?? ?? ?? 180 85 15 ?? ?? ?? pf note: all specifications are subject to change without notificat ion. scd's for these devices should be reviewed by ssdi prior to release. data sheet #: FT0015a doc notes: * pulse test: pulse width = 300 m sec, duty cycle = 2% 1 / for ordering information, price, availability contact factory. 2 / screening per mil - prf - 19 500 3 / for package outlines contact factory. 4 / unless otherwise specified, all electrical characteristics @25oc.
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